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| BFY183 HiRel NPN Silicon RF Transistor * * * * * * HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY183 (ql) Marking - Ordering Code see below Pin Configuration C E B E Package Micro-X1 (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702F1609 on request on request Q62702F1713 (see order instructions for ordering example) Infineon Technology AG 1 of 5 Draft A, Jul. 0101 BFY183 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS 99C 2.) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 2.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Values 12 20 20 2 65 5 1.) 450 200 -65...+200 -65...+200 Unit V V V V mA mA mW C C C Rth JS < 225 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 20mA (spotmeasurement duration < 1s) 2) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25C; unless otherwise specified Parameter Symbol min. DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,3A VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 12V Infineon Technology AG 2 of 5 Draft A, Jul. 0101 1.) Values typ. max. Unit ICBO ICEX ICBO IEBO IEBO - - 100 A - - 300 A Collector-base cutoff current - - 50 nA A A - - 25 - - 0.5 BFY183 Electrical Characteristics (continued) Parameter Symbol min. DC Characteristics Base-Emitter forward voltage IE = 30 mA, IC = 0 DC current gain IC = 5 mA, VCE = 6 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 500 MHz IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 8 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt Power gain IC = 20 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt Transducer gain IC = 20 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50 Output Power IC = 30 mA, VCE = 5 V, f = 2GHz , PIN=7dBm ZS = ZL = 50 Notes.: POUT 13.5 14.5 dBm |S21e|2 9 10,5 dB Gma 1.) Values typ. max. Unit VFBE hFE - - 1 V 55 90 160 - fT 6,5 CCB CCE CEB F 7.5 8 0.32 0.44 GHz pF - 0.34 - pF - 1.1 1.4 pF - 2.3 2.9 dB 12.5 14 - dB 1) G ma = S 21 2 ( k - k - 1) , S 12 G ms = S 21 S12 Infineon Technology AG 3 of 5 Draft A, Jul. 0101 BFY183 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: Q.......... BFY183 (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1713 BFY183 ES For BFY193 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Wireless Semiconductors http://www.infineon.com - HiRel Discrete and Microwave Semiconductors www.infineon.com/cgi/ecrm.dll/ecrm/scripts/prod_ov.jsp?oid=16149&cat_oid=-8154 Infineon Technology AG 4 of 5 Draft A, Jul. 0101 BFY183 Micro-X1 Package Published by Infineon Technologies Wireless, Discretes Products, Marketing, P.O.Box 801709, D81617 Munich. (c) Infineon Technologies AG 1998. All Rights Reserved. 4 3 1 2 As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 5 of 5 Draft B, Jul. 01 |
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